Papers matching “two-dimensional transistors” 35
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Large-area integration of two-dimensional materials and their heterostructures by wafer bonding2021 Nature Communications article Materials Science 2D Materials and Applications Open access cited by 2 patents
Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, +10 more
213citations -
The Schottky barrier transistor in emerging electronic devices2023 Nanotechnology article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Mike Schwarz, Tom Doekle Vethaak, Vincent Derycke, Anaïs Francheteau, Benjamı́n Iñı́guez, Satender Kataria, +6 more
54citations -
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors2024 npj 2D Materials and Applications article Materials Science 2D Materials and Applications Open access
Daniel Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, +9 more
21citations -
Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications2025 ACS Applied Materials & Interfaces article Materials Science 2D Materials and Applications Open access
Yuan Fa, Agata Piacentini, Bart Macco, H. Kalisch, M. Heuken, Andrei Vescan, +2 more
20citations -
Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors2026 Advanced Science article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Jens Trommer, Juan P. Martinez, Yuxuan He, Giulio Galderisi, Katrin Pingen, Eduardo Sergio Oliveros‐Mata, +14 more
0citations -
Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access
Fatemeh Khorramshahi, Heorhii Bohuslavskyi, Anton Murros, Agata Piacentini, M. Heuken, Max C. Lemme, +2 more
1citations -
Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics
Tamara Rudenko, Yu. V. Gomeniuk, O. M. Slobodian, P. M. Lytvyn, Eros Reato, Ardeshir Esteki, +2 more
0citations -
Improved Reliability of 2D-TMDC Dry Transfer via PMMA and Target Substrate Treatments2025 ACS Applied Electronic Materials article Materials Science 2D Materials and Applications Open access
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing Wang, Jochen M. Schneider, +5 more
6citations -
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Liubou Padzialioshkina, Arno Kirchbrücher, Qi Ze Shu, Achim Noculak, Renato Negra, C. Mauder, +4 more
1citations