Arno Kirchbrücher ▲ Sign in to save

• Regrown quasi-vertical GaN-based p + -n Diode with CF 4 -plasma and in-situ TMGa pretreatments

  2026 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  0

  citations
• Regrown quasi-vertical GaN-based p+-n Diode with CF4-plasma and in-situ TMGa pretreatments

  2026 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  0

  citations
• Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates

  2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials

  1

  citations
• Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes

  2025 physica status solidi (a) article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  2

  citations
• Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

  2025 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials

  0

  citations
• Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

  2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  25

  citations
• MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

  2022 Journal of Physics D Applied Physics article Physics and Astronomy GaN-based semiconductor devices and materials

  10

  citations

7 results