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Advancements in Semiconductor Devices and Circuit Design Sign in to save
Papers per year
Papers 48
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The Schottky barrier transistor in emerging electronic devices2023 Nanotechnology article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Mike Schwarz, Tom Doekle Vethaak, Vincent Derycke, Anaïs Francheteau, Benjamı́n Iñı́guez, Satender Kataria, +6 more
54citations -
Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance2020 ACS Applied Nano Materials article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Dong Yang, Alexander Shkurmanov, Jin Hee Bae, Viktoria Schlykow, Jean‐Michel Hartmann, +8 more
29citations -
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Benjamin Richstein, F. Allibert, Ionut Radu, Jin Hee Bae, +3 more
23citations -
Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs2020 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Florian Lentz, Stefan Trellenkamp, Jean‐Michel Hartmann, Joachim Knoch, Detlev Grützmacher, +2 more
21citations -
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors2021 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Bin Sun, Benjamin Richstein, Patrick Liebisch, Thorben Frahm, Jens Trommer, Thomas Mikolajick, +1 more
21citations -
Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm2020 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Alexander Hardtdegen, Jin Hee Bae, Jean‐Michel Hartmann, Joachim Knoch, Detlev Grützmacher, +2 more
20citations -
Ultra-low-power cryogenic complementary metal oxide semiconductor technology2025 Nature Reviews Electrical Engineering review Engineering Advancements in Semiconductor Devices and Circuit Design
Qing‐Tai Zhao, Yi Han, Hung-Chi Han, Lars R. Schreiber, Tsung-En Lee, Hung-Li Chiang, +6 more
18citations -
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing‐Tai Zhao
14citations -
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design cited by 2 patents
Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more
12citations -
Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more
11citations -
Analyzing Carrier Density and Hall Mobility in Impurity‐Free Silicon Virtually Doped by External Defect Placement2024 Advanced Functional Materials article Engineering Advancements in Semiconductor Devices and Circuit Design
Soundarya Nagarajan, Ingmar Ratschinski, S. Schmult, S. Wirth, Dirk König, Thomas Mikolajick, +2 more
10citations -
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide2023 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Ionut Radu, Joachim Knoch, Detlev Grützmacher, Qing‐Tai Zhao
7citations -
Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors2023 physica status solidi (a) article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Joachim Knoch, Benjamin Richstein, Yi Han, M. Frentzen, Lars R. Schreiber, Jan Klos, +4 more
6citations -
Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm2020 IEEE Symposium on VLSI Technology conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Mingshan Liu, Viktoria Schlykow, Jean‐Michel Hartmann, Joachim Knoch, Detlev Grützmacher, Dan Buca, +1 more
6citations -
Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results2023 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design
Markus A. Müller, Hendrik Leenders, Christoph Jungemann, M. Schröter
6citations
Most active Aachen authors
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Joachim Knoch 8,248 citations overall22 papers
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Christoph Jungemann 3,752 citations overall20 papers
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Benjamin Richstein 125 citations overall8 papers
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Tobias Linn 75 citations overall8 papers
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Hendrik Leenders 17 citations overall5 papers
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Yi Han 2,290 citations overall4 papers
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Lars R. Schreiber 2,041 citations overall4 papers
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M. Frentzen 227 citations overall4 papers
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Maziar Noei 23 citations overall4 papers
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Dirk König 2,696 citations overall3 papers
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Fengben Xi 1,904 citations overall3 papers
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Noël Wilck 78 citations overall3 papers
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Jan Klos 59 citations overall3 papers
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Christoph Stampfer 17,108 citations overall2 papers
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Mingshan Liu 1,297 citations overall2 papers