Dynamic Monolayer WSe2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing

Small, pp. e2504066

Abstract

Abstract Physical reservoir computing (PRC) is considered as an efficient method for solving complex time series tasks due to its outstanding advantages such as easy training and hardware implementation. However, a memristor‐based reservoir with only a single timescale carrier/ion dynamics limits the performance of multiple timescale feature extraction. Here a fully volatile, electrolyte‐gated monolayer (ML) WSe2 transistor with a coexistent double relaxation timescale (DRT) is reported, which enriches the reservoir dynamics and has excellent time series prediction capability in PRC. The coexistence of DRT is achieved by the ion‐electron coupling effect between the electrolyte dielectric and the WSe2 channel. Compared with single relaxation timescale (SRT), the DRT in WSe2 transistor leads to enhanced information processing capability in chaotic time series prediction, multi‐scale time series prediction, and traffic trajectory prediction applications. This work paves the way for the development of complex timescale‐based dynamic devices for high‐performance reservoir computing networks.

Authors 10

1. Dongdong Sun

   University of Science and Technology of China

   Affiliation as printed

   School of Microelectronics University of Science and Technology of China Hefei 230026 China

2. Ao Li

   University of Science and Technology of China

   Affiliation as printed

   School of Microelectronics University of Science and Technology of China Hefei 230026 China

3. Shaofan Zhao

   University of Science and Technology of China

   Affiliation as printed

   School of Microelectronics University of Science and Technology of China Hefei 230026 China

4. Z. Xu

   University of Science and Technology of China

   Affiliation as printed

   School of Microelectronics University of Science and Technology of China Hefei 230026 China

5. Qinghai Tan

   University of Science and Technology of China

   Affiliation as printed

   School of Microelectronics University of Science and Technology of China Hefei 230026 China

6. Yi Wan

   National University of Singapore

   Affiliation as printed

   Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore

7. Xiangdong Li

   Xidian University · Guangzhou Institute of Technology

   Affiliation as printed

   Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou 510555 China

8. Shaochuan Chen Aachen

   National Institute for Materials Science · RWTH Aachen University

   Affiliation as printed

   International Center for Young Scientists (ICYS) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

   RWTH Aachen University 52074 Aachen Germany

9. Ilia Valov

   Forschungszentrum Jülich · Bulgarian Academy of Sciences · Institute of Electrochemistry and Energy Systems · Jülich Aachen Research Alliance

   Affiliation as printed

   Institute of Electrochemistry and Energy Systems Bulgarian Academy of Sciences Acad. G. Bonchev 10 Sofia 1113 Bulgaria

   Peter Grünberg Institute (PGI‐7) and JARA‐FIT Forschungszentrum Jülich 52425 Jülich Germany

10. Yuanyuan Shi corresponding

    University of Science and Technology of China

    Affiliation as printed

    School of Microelectronics University of Science and Technology of China Hefei 230026 China