Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe2 (Adv. Funct. Mater. 36/2021)
Advanced Functional Materials, vol. 31
Abstract
2D Semiconductors In article number 2102721, Paolo Samorì and co-workers report ternary-responsive field-effect transistors based on few-layer WSe2 by decorating its two surfaces with photochromic diarylethene and ferroelectric poly(vinylidene fluoride–trifluoroethylene), respectively. This Janus architecture enables the modulation devices' output current by either light irradiation or an electric field, paving the way for their application as high-density non-volatile memories.
Authors 4
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Centre National de la Recherche Scientifique · Institut de Science et d'Ingénierie Supramoléculaires · Université de Strasbourg
Affiliation as printed
University of Strasbourg CNRS, ISIS UMR 7006 8 Allée Gaspard Monge Strasbourg F‐67000 France
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Humboldt-Universität zu Berlin
Affiliation as printed
Department of Chemistry and IRIS Adlershof Humboldt‐Universität zu Berlin 12489 Berlin Germany
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Humboldt-Universität zu Berlin · DWI – Leibniz Institute for Interactive Materials · RWTH Aachen University
Affiliation as printed
DWI–Leibniz Institute for Interactive Materials Forckenbeckstr. 50 52074 Aachen Germany
Department of Chemistry and IRIS Adlershof Humboldt‐Universität zu Berlin 12489 Berlin Germany
Institute of Technical and Macromolecular Chemistry RWTH Aachen University Worringer Weg 2 52074 Aachen Germany
Institute of Technical and Macromolecular Chemistry, RWTH Aachen University, Worringer Weg 2, 52074 Aachen, Germany
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Centre National de la Recherche Scientifique · Institut de Science et d'Ingénierie Supramoléculaires · Université de Strasbourg
Affiliation as printed
University of Strasbourg CNRS, ISIS UMR 7006 8 Allée Gaspard Monge Strasbourg F‐67000 France
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