Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration

Materials Science in Semiconductor Processing, vol. 190, pp. 109336

Abstract

To advance the technology readiness level of the field effect transistors (FETs) based on multilayer two-dimensional (2D) molybdenum disulfide (MoS 2 ), we conducted a large-scale statistical study with approximately 400 FETs fabricated on a silicon wafer . Our study examines the influence of two complementary metal oxide semiconductor (CMOS)-compatible gate metal materials with Nb being used for the first time in MoS 2 FET, on the device performance and demonstrates the integration potential with resistive memory element. Transistors with varied channel dimensions were fabricated using each gate metal in an identical back gate, top contact structure and layout. Low-temperature processes (below 300 °C) were employed to ensure applicability to flexible electronics. Our MoS 2 transistors achieved ON current (Ion) of up to ∼100 μA at a source-drain voltage (VDS) of 2.5 V for the transistor with a 160 μm-wide channel on/off current ratio of 108, and a threshold voltage of 1.8 V when measured in an ambient environment. While Ion, contact resistance (RC), and subthreshold swing (SS) were improved with titanium nitride (TiN) gate metal, gate hysteresis was reduced in Nb-gated transistors. The transistors with TiN gate metal showed on resistance (Ron) of 5 Ω m and SS as low as 100 mV/dec. For demonstration, following FET fabrication, we applied a dielectric passivation layer to facilitate the post processing, then co-integrated a memory element with transistor to implement a one transistor-one resistive memory (1T1R) structure achieving over 100 direct-current (DC) switching cycles, thereby validating the feasibility of post-processing of MoS 2 -transistor at low temperatures.

Authors 8

1. Fatemeh Khorramshahi corresponding

   VTT Technical Research Centre of Finland

   Affiliation as printed

   VTT Technical Research Center of Finland, Espoo, Finland

2. Heorhii Bohuslavskyi

   VTT Technical Research Centre of Finland

   Affiliation as printed

   VTT Technical Research Center of Finland, Espoo, Finland

3. Anton Murros

   VTT Technical Research Centre of Finland

   Affiliation as printed

   VTT Technical Research Center of Finland, Espoo, Finland

4. Agata Piacentini Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

5. M. Heuken Aachen Compound Semiconductor Technology

   Aixtron (Germany) · RWTH Aachen University

   Affiliation as printed

   AIXTRON SE, 52134, Herzogenrath, Germany

   Compound Semiconductor Technology, RWTH Aachen University, Aachen, Germany

6. Max C. Lemme Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

7. Daniel Neumaier Aachen AMO GmbH Advanced Microelectronic Center Aachen

   University of Wuppertal · AMO (Germany)

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany

   Bergische Universität Wuppertal, Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany

8. Karl‐Magnus Persson

   VTT Technical Research Centre of Finland

   Affiliation as printed

   VTT Technical Research Center of Finland, Espoo, Finland