Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

ACS Applied Materials & Interfaces, vol. 17, pp. 24526–24534

Abstract

High Resolution Image Download MS PowerPoint Slide Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS 2 )-FETs, have gained significant attention for their potential for ultrashort channels, thereby extending Moore’s law. However, MoS 2 –FETs are prone to the formation of Schottky barriers at the metal-MoS 2 interface, resulting in high contact resistance ( R c ) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS 2 to induce the formation of conductive 1T-MoS 2 at the metal-MoS 2 interface via reverse sputtering. MoS 2 –FETs exposed to optimized reverse sputtering conditions in the contact area show R c values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS 2 –FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits.

Authors 8

1. Yuan Fa Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

2. Agata Piacentini Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

3. Bart Macco

   Eindhoven University of Technology

   Affiliation as printed

   Department of Applied Physics and Science Education

   Eindhoven University of Technology

   Department of Applied Physics and Science Education, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

4. H. Kalisch Aachen Compound Semiconductor Technology

   Compound Semiconductor Technologies (United Kingdom) · RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology

   RWTH Aachen University

   Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany

5. M. Heuken Aachen Compound Semiconductor Technology

   Aixtron (Germany) · Compound Semiconductor Technologies (United Kingdom) · RWTH Aachen University

   Affiliation as printed

   AIXTRON SE

   Compound Semiconductor Technology

   RWTH Aachen University

   AIXTRON SE, 52134 Herzogenrath, Germany

   Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany

6. Andrei Vescan Aachen Compound Semiconductor Technology

   Compound Semiconductor Technologies (United Kingdom) · RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology

   RWTH Aachen University

   Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany

7. Zhenxing Wang corresponding Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

8. Max C. Lemme corresponding Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany