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GaN-based semiconductor devices and materials Sign in to save
Papers per year
Papers 26
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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Lars Heuken, M. Kortemeyer, Alessandro Ottaviani, M. Alomari, Dirk Fahle, M. Marx, +4 more
38citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrücher, +2 more
25citations -
Probing the onset of wurtzite phase formation in (V,Al)N thin films by transmission electron microscopy and atom probe tomography2022 Surface and Coatings Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Marcus Hans, Zsolt Czigány, Deborah Neuß, Janis A. Sälker, Holger Rueß, Janina Krause, +3 more
20citations -
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
C. Mauder, Herwig Hahn, M Marx, Z. Gao, Robert Oligschlaeger, Thorsten Zweipfennig, +5 more
13citations -
Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Alessandro Ottaviani, Paula Palacios, Thorsten Zweipfennig, M. Alomari, Carsten Beckmann, David Bierbüsse, +6 more
11citations -
MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases2022 Journal of Physics D Applied Physics article Physics and Astronomy GaN-based semiconductor devices and materials
Carsten Beckmann, Jens Wieben, Thorsten Zweipfennig, Arno Kirchbrücher, Jasmin Ehrler, Zineng Yang, +2 more
10citations -
Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes2025 IEEE Electron Device Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Enrico Brusaterra, Lutz Deriks, Serhiy Danylyuk, Elisabeth Brandl, Julian Bravin, Marta Pawlak, +4 more
7citations -
Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces2020 Physical review. B./Physical review. B article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Yifan Wang, Michael Schnedler, Qianqian Lan, Fengshan Zheng, Lars Freter, Yan Lu, +7 more
7citations -
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials cited by 5 patents
Arne Debald, Simon Kotzea, H Ahmadsad, M. Heuken, H. Kalisch, Andrei Vescan
6citations -
Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes2025 physica status solidi (a) article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Qi Ze Shu, Kexin Zhou, Arno Kirchbrücher, H. Kalisch, Andrei Vescan, Arne Debald, +1 more
2citations -
Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions2020 Journal of Applied Physics article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Lars Freter, Yifan Wang, Michael Schnedler, J.‐F. Carlin, R. Butté, N. Grandjean, +3 more
2citations -
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Liubou Padzialioshkina, Arno Kirchbrücher, Qi Ze Shu, Achim Noculak, Renato Negra, C. Mauder, +4 more
1citations -
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency2021 Electronics Letters article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, H. Kalisch, +2 more
1citations
Most active Aachen authors
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Andrei Vescan 4,461 citations overall13 papers
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H. Kalisch 3,393 citations overall13 papers
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Thorsten Zweipfennig 135 citations overall7 papers
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Arno Kirchbrücher 38 citations overall7 papers
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M. Heuken 8,316 citations overall6 papers
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Renato Negra 3,027 citations overall5 papers
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Qi Ze Shu 12 citations overall5 papers
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Carsten Beckmann 68 citations overall4 papers
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Jasmin Ehrler 53 citations overall4 papers
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Jens Wieben 51 citations overall4 papers
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Irene M. N. Groot 2,031 citations overall2 papers
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Serhiy Danylyuk 998 citations overall2 papers
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Muh‐Dey Wei 694 citations overall2 papers
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Yifan Wang 428 citations overall2 papers
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Achim Noculak 336 citations overall2 papers