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• Regrown quasi-vertical GaN-based p + -n Diode with CF 4 -plasma and in-situ TMGa pretreatments

  2026 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  0

  citations
• Regrown quasi-vertical GaN-based p+-n Diode with CF4-plasma and in-situ TMGa pretreatments

  2026 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  0

  citations
• Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates

  2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials

  1

  citations
• Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes

  2025 physica status solidi (a) article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  2

  citations
• Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

  2025 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials

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  citations

5 results