Papers matching “two-dimensional transistors” 43
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Large-area integration of two-dimensional materials and their heterostructures by wafer bonding2021 Nature Communications article Materials Science 2D Materials and Applications Open access cited by 2 patents
Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, +10 more
213citations -
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors2024 npj 2D Materials and Applications article Materials Science 2D Materials and Applications Open access
Daniel Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, +9 more
21citations -
Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications2025 ACS Applied Materials & Interfaces article Materials Science 2D Materials and Applications Open access
Yuan Fa, Agata Piacentini, Bart Macco, H. Kalisch, M. Heuken, Andrei Vescan, +2 more
20citations -
Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications2024 arXiv (Cornell University) preprint Materials Science 2D Materials and Applications Open access
Yuan Fa, Agata Piacentini, Bart Macco, H. Kalisch, M. Heuken, Andrei Vescan, +2 more
0citations -
Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics2024 arXiv (Cornell University) preprint Materials Science 2D Materials and Applications Open access
Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini, Harm C. M. Knoops, Bart Macco, Martin Otto, +11 more
1citations -
Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access
Fatemeh Khorramshahi, Heorhii Bohuslavskyi, Anton Murros, Agata Piacentini, M. Heuken, Max C. Lemme, +2 more
1citations -
Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics
Tamara Rudenko, Yu. V. Gomeniuk, O. M. Slobodian, P. M. Lytvyn, Eros Reato, Ardeshir Esteki, +2 more
0citations