Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors

Conference digest, pp. 1–2

Abstract

Two-dimensional (2D) semiconductor devices are attractive for future electronics, but face reliability challenges due to electrically-active defects in the gate insulator or at the insulator-semiconductor interface [1 , 2] . A few previous efforts have attempted to quantify and explain the physical origins and contributions of defects to 2D transistor device behavior [3 , 4] , or focus on the dynamic processes behind charge capture and emission, and their influence on subthreshold transport in 2D transistors [5] . However, defect characterization techniques for 2D semiconductors remain underexplored. Here, for the first time, we utilize time-dependent charge pumping-like measurements to characterize defect-mediated electron trapping in monolayer (1L) WS 2 transistors.

Authors 9

1. Jun Yang

   Stanford University

   Affiliation as printed

   Stanford Univ.,Electrical Eng.,USA

2. Eros Reato Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen Univ.,Chair of Electronic Devices,Germany

3. Theresia Knobloch

   TU Wien

   Affiliation as printed

   TU Wien,Institute for Microelectronics,Austria

4. Ze Zhang

   Stanford University

   Affiliation as printed

   Stanford Univ.,Materials Sci & Eng.,USA

5. Andrew J. Mannix

   Stanford University

   Affiliation as printed

   Stanford Univ.,Materials Sci & Eng.,USA

6. Krishna C. Saraswat

   Stanford University

   Affiliation as printed

   Stanford Univ.,Electrical Eng.,USA

7. Tibor Grasser

   TU Wien

   Affiliation as printed

   TU Wien,Institute for Microelectronics,Austria

8. Max C. Lemme Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen Univ.,Chair of Electronic Devices,Germany

9. Eric Pop

   Stanford University

   Affiliation as printed

   Stanford Univ.,Electrical Eng.,USA