MoS2/graphene Lateral Heterostructure Field Effect Transistors

Conference digest, pp. 1–2

Abstract

Integrated logic circuits require transistors that have a sufficiently high mobility, but also a high current on/off ratio. In this respect, two-dimensional (2D) molybdenum disulfide (MoS2) has been demonstrated as a suitable channel material for n-type field-effect transistors (FETs) with high performance. Single-layer graphene (SLG) has been shown to reduce contact resistance in such MoS2devices [2], [3]. Here, we experimentally demonstrate a scalable method for low resistivity contacts to MoS2using only chemical vapor deposited (CVD)-grown SLG, corroborated through simulations that explore the scalability potential of contact resistance optimization based on this approach.

Authors 15

1. Daniel Schneider Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

   RWTH Aachen University, Aachen, Germany

2. Eros Reato Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

   RWTH Aachen University, Aachen, Germany

3. Leonardo Lucchesi

   University of Pisa

   Affiliation as printed

   University of Pisa,Pisa,Italy,56122

4. Zhenyu Wang Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany) · École Polytechnique Fédérale de Lausanne

   Affiliation as printed

   École Polytechnique Fédérale de Lausanne (EPFL),Lausanne,Switzerland,CH-1015

   AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

5. Agata Piacetini Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

   RWTH Aachen University, Aachen, Germany

6. Jens Bolten Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

7. Damiano Marian

   University of Pisa

   Affiliation as printed

   University of Pisa,Pisa,Italy,56122

8. Enrique G. Marín

   Universidad de Granada

   Affiliation as printed

   University of Granada,Granada,Spain,18070

9. Aleksandra Rađenović

   École Polytechnique Fédérale de Lausanne

   Affiliation as printed

   École Polytechnique Fédérale de Lausanne (EPFL),Lausanne,Switzerland,CH-1015

10. Zhenxing Wang Aachen AMO GmbH Advanced Microelectronic Center Aachen

    AMO (Germany) · École Polytechnique Fédérale de Lausanne

    Affiliation as printed

    École Polytechnique Fédérale de Lausanne (EPFL),Lausanne,Switzerland,CH-1015

    AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

11. Gianluca Fiori

    University of Pisa

    Affiliation as printed

    University of Pisa,Pisa,Italy,56122

12. András Kis

    École Polytechnique Fédérale de Lausanne

    Affiliation as printed

    École Polytechnique Fédérale de Lausanne (EPFL),Lausanne,Switzerland,CH-1015

13. Giuseppe Iannaccone

    University of Pisa

    Affiliation as printed

    University of Pisa,Pisa,Italy,56122

14. Daniel Neumaier Aachen AMO GmbH Advanced Microelectronic Center Aachen

    University of Wuppertal · AMO (Germany)

    Affiliation as printed

    AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

    University of Wuppertal, Wuppertal, Germany

15. Max C. Lemme Aachen AMO GmbH Advanced Microelectronic Center Aachen

    AMO (Germany) · RWTH Aachen University

    Affiliation as printed

    AMO GmbH,Advanced Microelectronic Center Aachen (AMICA),Aachen,Germany,52074

    RWTH Aachen University, Aachen, Germany