Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

arXiv (Cornell University)

Abstract

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FETs are prone to the formation of Schottky barriers at the metal-MoS${_2}$ interface, resulting in high contact resistance (R${_c}$) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS${_2}$ to induce the formation of conductive 1T-MoS${_2}$ at the metal-MoS${_2}$ interface via reverse sputtering. MoS${_2}$-FETs exposed to optimized reverse sputtering conditions in the contact area show R${_c}$ values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS${_2}$-FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits.

Authors 8

1. Yuan Fa Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH , Advanced Microelectronic Center Aachen , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

   Chair of Electronic Devices , RWTH Aachen University , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

2. Agata Piacentini Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH , Advanced Microelectronic Center Aachen , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

   Chair of Electronic Devices , RWTH Aachen University , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

3. Bart Macco

   Eindhoven University of Technology

   Affiliation as printed

   Department of Applied Physics and Science Education , Eindhoven University of Technology , 5600 MB Eindhoven , The Netherlands

4. H. Kalisch Aachen Compound Semiconductor Technology

   RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology , RWTH Aachen University , 52074 Aachen , Germany

5. M. Heuken Aachen Compound Semiconductor Technology

   Aixtron (Germany) · RWTH Aachen University

   Affiliation as printed

   AIXTRON SE , 52134 Herzogenrath , Germany

   Compound Semiconductor Technology , RWTH Aachen University , 52074 Aachen , Germany

6. Andrei Vescan Aachen Compound Semiconductor Technology

   RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology , RWTH Aachen University , 52074 Aachen , Germany

7. Zhenxing Wang Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   AMO GmbH , Advanced Microelectronic Center Aachen , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

8. Max C. Lemme Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH , Advanced Microelectronic Center Aachen , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany

   Chair of Electronic Devices , RWTH Aachen University , Otto-Blumenthal-Str. 25 , 52074 Aachen , Germany