Not finding it? Sign in to also search OpenAlex live.
-
The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure2023 The Journal of Physical Chemistry C article Materials Science 2D Materials and Applications Open access
Henrik Wördenweber, Annika Grundmann, Zhaodong Wang, Susanne Hoffmann‐Eifert, H. Kalisch, Andrei Vescan, +3 more
4citations -
Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire2026 JuSER (Forschungszentrum Jülich) preprint Engineering Acoustic Wave Resonator Technologies Open access
Thomas J. Smart, Marc Neis, Janine Lorenz, Marcello P. Guardascione, Roudy Hanna, Michael Schleenvoigt, +12 more
0citations -
Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire2026 Superconductor Science and Technology article Engineering Acoustic Wave Resonator Technologies Open access
Thomas J. Smart, Marc Neis, Janine Lorenz, Marcello P. Guardascione, Roudy Hanna, Michael Schleenvoigt, +12 more
0citations -
Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire2026 arXiv (Cornell University) preprint Engineering Acoustic Wave Resonator Technologies Open access
Thomas J. Smart, Marc Neis, Janine Lorenz, Marcello P. Guardascione, Roudy Hanna, Michael Schleenvoigt, +12 more
0citations -
Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrücher, +2 more
25citations -
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Liubou Padzialioshkina, Arno Kirchbrücher, Qi Ze Shu, Achim Noculak, Renato Negra, C. Mauder, +4 more
1citations -
MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases2022 Journal of Physics D Applied Physics article Physics and Astronomy GaN-based semiconductor devices and materials
Carsten Beckmann, Jens Wieben, Thorsten Zweipfennig, Arno Kirchbrücher, Jasmin Ehrler, Zineng Yang, +2 more
10citations -
Improved Reliability of 2D-TMDC Dry Transfer via PMMA and Target Substrate Treatments2025 ACS Applied Electronic Materials article Materials Science 2D Materials and Applications Open access
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing Wang, Jochen M. Schneider, +5 more
6citations -
Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Alessandro Ottaviani, Paula Palacios, Thorsten Zweipfennig, M. Alomari, Carsten Beckmann, David Bierbüsse, +6 more
11citations -
Semi-Transparent Quaternary Oxynitride Photoanodes on GaN Underlayers2020 Zenodo (CERN European Organization for Nuclear Research) article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Zili Ma, Karolina Piętak, Jędrzej Piątek, Justin Reed DeMoulpied, Richard Dronskowski, Sebastian Złotnik, +2 more
0citations