Wafer-scale inspection of graphene conductivity by THz near-field scanning: As-grown on sapphire and after transfer to SiO2/Si

Abstract

We present THz near-field transmission measurements for CVD-grown 2" graphene mono-layer on sapphire before and after transfer to SiO2/Si substrate. The capability to detect changes in the graphene electronic properties after the transfer reveal the potential of THz-measurements as a non-destructive inspection tool for large scale samples with micron-scale resolution.

Authors 10

1. Alexander Michalski Aachen Protemics GmbH

   Protemics (Germany)

   Affiliation as printed

   Protemics GmbH, Aachen, Germany

2. Simon Sawallich Aachen Protemics GmbH

   Protemics (Germany)

   Affiliation as printed

   Protemics GmbH, Aachen, Germany

3. Simonas Krotkus

   Aixtron (Germany)

   Affiliation as printed

   AIXTRON SE, Herzogenrath, Germany

4. Himadri Pandey Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University, Germany

5. Satender Kataria Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University, Germany

6. M. Heuken

   Aixtron (Germany)

   Affiliation as printed

   AIXTRON SE, Herzogenrath, Germany

7. Ben Richard Conran

   Aixtron (United Kingdom)

   Affiliation as printed

   AIXTRON Ltd, Cambridge, United Kingdom

8. C. McAleese

   Aixtron (United Kingdom)

   Affiliation as printed

   AIXTRON Ltd, Cambridge, United Kingdom

9. M. Nagel Aachen Protemics GmbH

   Protemics (Germany)

   Affiliation as printed

   Protemics GmbH, Aachen, Germany

10. Max C. Lemme Aachen

    RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University, Germany