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• Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

  2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  25

  citations
• MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

  2022 Journal of Physics D Applied Physics article Physics and Astronomy GaN-based semiconductor devices and materials

  10

  citations
• 3D Integrated 300°C Tunable RF Oscillator exploiting AlGaN/GaN HEMT for High Temperature Applications

  2021 IEEE MTT-S International Microwave Symposium digest conference-paper Engineering Radio Frequency Integrated Circuit Design

  7

  citations
• AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

  2021 Electronics Letters article Physics and Astronomy GaN-based semiconductor devices and materials Open access

  1

  citations
• Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

  2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials

  11

  citations

5 results