High-Temperature Device Characterisation, Modelling and Oscillator Design

German Microwave Conference, pp. 128–131

Abstract

In this paper, we have characterised a GaN device and established a temperature-dependence model up to 5 GHz. The GaN model with the self heating effect is built and verified from 23° to 300°. Due to high operation temperature commercial passive components are not suitable. Hence, inductors and capacitors are implemented on a sapphire substrate, which can withstand over 300°. Temperature-dependence passive models are also investigated. A Colpitts oscillator for temperature of 300° is designed in order to verify the extracted active and passive models. The GaN device is mounted on the sapphire substrate as a carrier. Oscillation frequency of 2.46 GHz and 2.52 GHz is obtained at 23° and 300°, respectively. Output power is more than 8.7 dBm over the entire operation temperature. DC current consumption is 16 mA and 9 mA for 23° and 300°, respectively, with a supply voltage of 5 V.

Authors 3

1. David Bierbüsse Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics RWTH Aachen University,Aachen,Germany,52062

2. Muh‐Dey Wei Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics RWTH Aachen University,Aachen,Germany,52062

3. Renato Negra Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics RWTH Aachen University,Aachen,Germany,52062