Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific Reports, vol. 12, pp. 18743
Abstract
Abstract Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al2O3 (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications.
Authors 10
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Henrik Wördenweber Aachen
Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany
RWTH Aachen University, 52066, Aachen, Germany
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Silvia Karthäuser corresponding
Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany. s.karthaeuser@fz-juelich.de
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany
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Affiliation as printed
Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany
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Zhaodong Wang Aachen
Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany
RWTH Aachen University, 52066, Aachen, Germany
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Stephan Aussen Aachen
Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany
RWTH Aachen University, 52066, Aachen, Germany
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Affiliation as printed
Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany
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Affiliation as printed
Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany
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Aixtron (Germany) · RWTH Aachen University
Affiliation as printed
AIXTRON SE, 52134, Herzogenrath, Germany
Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany
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Rainer M. Waser Aachen Institute of Materials in Electrical Engineering and Information Technology II
Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52074, Aachen, Germany
JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany
Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany
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Susanne Hoffmann‐Eifert corresponding
Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany. su.hoffmann@fz-juelich.de
JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany
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