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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Scientific Reports, vol. 12, pp. 18743

Abstract

Abstract Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al2O3 (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications.

Authors 10

  1. Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany

    RWTH Aachen University, 52066, Aachen, Germany

  2. Silvia Karthäuser corresponding

    Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany. s.karthaeuser@fz-juelich.de

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany

  3. RWTH Aachen University

    Affiliation as printed

    Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany

  4. Zhaodong Wang Aachen

    Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany

    RWTH Aachen University, 52066, Aachen, Germany

  5. Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany

    RWTH Aachen University, 52066, Aachen, Germany

  6. RWTH Aachen University

    Affiliation as printed

    Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany

  7. RWTH Aachen University

    Affiliation as printed

    Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany

  8. Aixtron (Germany) · RWTH Aachen University

    Affiliation as printed

    AIXTRON SE, 52134, Herzogenrath, Germany

    Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany

  9. Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52074, Aachen, Germany

    JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany

    Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany

  10. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany. su.hoffmann@fz-juelich.de

    JARA-Institute Energy-Efficient Information Technology (Green IT & PGI-10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany

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References 78