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Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrücher, +2 more
25citations -
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Benjamin Richstein, F. Allibert, Ionut Radu, Jin Hee Bae, +3 more
23citations -
Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs2020 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Florian Lentz, Stefan Trellenkamp, Jean‐Michel Hartmann, Joachim Knoch, Detlev Grützmacher, +2 more
21citations -
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing‐Tai Zhao
14citations -
Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more
11citations -
Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors2023 physica status solidi (a) article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Joachim Knoch, Benjamin Richstein, Yi Han, M. Frentzen, Lars R. Schreiber, Jan Klos, +4 more
6citations -
Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access
Fatemeh Khorramshahi, Heorhii Bohuslavskyi, Anton Murros, Agata Piacentini, M. Heuken, Max C. Lemme, +2 more
1citations -
Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance2020 ACS Applied Nano Materials article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Dong Yang, Alexander Shkurmanov, Jin Hee Bae, Viktoria Schlykow, Jean‐Michel Hartmann, +8 more
29citations -
Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm2020 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design
Mingshan Liu, Alexander Hardtdegen, Jin Hee Bae, Jean‐Michel Hartmann, Joachim Knoch, Detlev Grützmacher, +2 more
20citations -
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design cited by 2 patents
Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more
12citations
17 results