February 12, 2019 article Open access Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications IEEE Transactions on Electron Devices DOI: 10.1109/ted.2019.2894387 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 74 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Modeling Endurance Degradation of VCM-based 1T1R ReRAM Cell for Circuit Simulations 2026 International Symposium on Quality Electronic Design (ISQED) conference-paper Engineering Advanced Memory and Neural Computing 0 citations Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration 2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access 1 citations Memristive ternary Łukasiewicz logic based on reading-based ratioed resistive states (3R) 2025 Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences article Engineering Advanced Memory and Neural Computing Open access 0 citations 3 results References 0