March 15, 2019 article Ternary content-addressable memory with MoS2 transistors for massively parallel data search Nature Electronics DOI: 10.1038/s41928-019-0220-7 OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 137 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Influence of Metal–Organic Chemical Vapor Deposition MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability 2026 ACS Applied Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 0 citations Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration 2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access 1 citations Analogue two-dimensional semiconductor electronics 2020 Nature Electronics article Materials Science 2D Materials and Applications Open access 140 citations 3 results References 0