December 01, 2014 article A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect IEEE Transactions on Electron Devices DOI: 10.1109/ted.2014.2365028 OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 194 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration 2025 Materials Science in Semiconductor Processing article Materials Science 2D Materials and Applications Open access 1 citations 1 result References 0