July 10, 2011 article A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Nature Materials DOI: 10.1038/nmat3070 OpenAlex Authors 0 Author list not loaded yet. Cited by 32 stored of 2,227 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Deliberately Flipping Bits in Memristive Crossbar Arrays 2026 Synthesis lectures on engineering, science, and technology book-chapter Computer Science Physical Unclonable Functions (PUFs) and Hardware Security 0 citations Spectroscopic investigation of the structural and electronic properties of oxygen-deficient tantalum oxide thin films 2026 Physical Chemistry Chemical Physics article Engineering Advanced Memory and Neural Computing 0 citations Electrochemical ohmic memristors for continual learning 2025 Nature Communications article Engineering Advanced Memory and Neural Computing Open access 40 citations Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration 2025 Materials Science in Semiconductor Processing article Engineering Advanced Memory and Neural Computing Open access 1 citations Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales 2024 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing Open access 6 citations NVM-Flip: Non-Volatile-Memory BitFlips on the System Level 2024 conference-paper Engineering Advanced Memory and Neural Computing Open access 0 citations Unveiling Conductance States in ReRAM Cells through Analysis of Ultra-Fast Pulse Sequences 2024 preprint Engineering Advanced Memory and Neural Computing Open access 0 citations In Operando Near‐Field Optical Investigation of Memristive Ta2O5 Thin Film Devices with a Graphene Top Electrode 2024 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access 5 citations Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices 2024 Nanoscale Horizons article Engineering Advanced Memory and Neural Computing Open access 9 citations Electrochemical ohmic memristors for continual learning 2023 Research Square preprint Engineering Advanced Memory and Neural Computing Open access 0 citations Eightwise Switching Mechanism in Memristive SrTiO 3 Devices and Its Implications on the Device Performance 2023 physica status solidi (a) article Engineering Advanced Memory and Neural Computing Open access 12 citations A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks 2023 Advanced Intelligent Systems article Engineering Advanced Memory and Neural Computing Open access 3 citations Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges 2023 Advanced Materials article Engineering Advanced Memory and Neural Computing Open access 179 citations Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches 2023 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access 16 citations Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices 2022 Physical Review Applied article Engineering Advanced Memory and Neural Computing 6 citations Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism 2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 42 citations Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities 2022 RSC Advances article Engineering Advanced Memory and Neural Computing Open access 15 citations Intrinsic RESET Speed Limit of Valence Change Memories 2021 ACS Applied Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 21 citations Standards for the Characterization of Endurance in Resistive Switching Devices 2021 ACS Nano article Engineering Advanced Memory and Neural Computing Open access 265 citations Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories 2021 Advanced Materials article Engineering Advanced Memory and Neural Computing Open access 72 citations 1–20 of 32 Page 1 / 2 Next → References 0