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Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates2023 IEEE Journal of the Electron Devices Society article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrücher, +2 more
25citations -
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design
Yi Han, Jingxuan Sun, Benjamin Richstein, F. Allibert, Ionut Radu, Jin Hee Bae, +3 more
23citations
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