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Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K2024 Physical Review Materials article Physics and Astronomy Semiconductor materials and interfaces Open access
Malte Neul, Isabelle V. Sprave, Laura K. Diebel, Lukas G. Zinkl, Florian Fuchs, Yuji Yamamoto, +3 more
8citations -
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line2025 Applied Physics Letters article Physics and Astronomy Quantum and electron transport phenomena Open access
Alberto Mistroni, Marco Lisker, Yuji Yamamoto, Wei-Chen Wen, F. Fidorra, H. Tetzner, +10 more
2citations -
Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces2020 Advanced Materials article Materials Science Electronic and Structural Properties of Oxides Open access
Marc‐André Rose, Břetislav Šmíd, Mykhailo Vorokhta, Ivetta Slipukhina, Michael Andrä, Hendrik Bluhm, +6 more
37citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene2023 ACS Nano article Materials Science Graphene research and applications Open access cited by 2 patents
Oliver J. Burton, Zachary Winter, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, +1 more
22citations -
Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene2020 ACS Applied Electronic Materials article Materials Science Graphene research and applications Open access cited by 4 patents
Sebastian Wittmann, Fabian Aumer, Doris Wittmann, Stephan Pindl, Stefan Wagner, Amit Gahoi, +4 more
21citations -
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
C. Mauder, Herwig Hahn, M Marx, Z. Gao, Robert Oligschlaeger, Thorsten Zweipfennig, +5 more
13citations -
Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO3/GdTiO3/SrTiO32021 Scientific Reports article Materials Science Electronic and Structural Properties of Oxides Open access
Martin Stehno, Abhimanyu Rana, Pim Reith, Nicolas Gauquelin, Johan Verbeeck, Hans Hilgenkamp, +2 more
10citations -
Enhanced Thermoelectric Properties by Embedding Fe Nanoparticles into CrN Films for Energy Harvesting Applications2024 ACS Applied Nano Materials article Materials Science Advanced Thermoelectric Materials and Devices Open access
Daria Pankratova, Khabib Yusupov, Alberto Vomiero, Sanath Kumar Honnali, Robert D. Boyd, Danièle Fournier, +4 more
9citations -
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Liubou Padzialioshkina, Arno Kirchbrücher, Qi Ze Shu, Achim Noculak, Renato Negra, C. Mauder, +4 more
1citations -
Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results2023 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design
Markus A. Müller, Hendrik Leenders, Christoph Jungemann, M. Schröter
6citations -
Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe 22025 2D Materials article Physics and Astronomy Quantum and electron transport phenomena Open access
Timo Bißwanger, Anne Schmidt, Frank Volmer, Christoph Stampfer, Bernd Beschoten
2citations -
Impact of Scattering on Graphene Geometric Diodes: A Comparative Analysis Between Simulations and Experiments2026 IEEE Transactions on Electron Devices article Materials Science Graphene research and applications Open access
D. Truccolo, Andreas Hemmetter, Pierpaolo Palestri, A. Abramo, Stefano Boscolo, Zhenxing Wang, +2 more
1citations -
Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe 22025 2D Materials article Physics and Astronomy Quantum and electron transport phenomena Open access
Timo Bißwanger, Anne Schmidt, Frank Volmer, Christoph Stampfer, Bernd Beschoten
1citations -
Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide2021 RWTH Publications (RWTH Aachen) article Materials Science 2D Materials and Applications Open access
Sebastian Lukas, Oliver Hartwig, Max C. Lemme, Maximilian Prechtl, Giovanna Capraro, Jens Bolten, +5 more
31citations -
Amphoteric Cu‐Doping Leading to High Thermoelectric Performance in p ‐Type Bismuth Antimony Telluride2026 Advanced Functional Materials article Materials Science Advanced Thermoelectric Materials and Devices Open access
Moritz Thiem, Zhiyuan Li, Minsu Heo, Fangyi Hu, Tian Lan, Youngdeog Koh, +10 more
0citations