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Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 32023 Advanced Functional Materials article Materials Science Advanced Thermoelectric Materials and Devices Open access
Jian Yang, Haolin Ye, Xiangzhao Zhang, Xin Miao, Xiubo Yang, Lin Hua Xie, +8 more
48citations -
A hidden bulk polymorph governs charge transport dimensionality in an organic semiconductor2026 arXiv (Cornell University) preprint Engineering Organic Electronics and Photovoltaics Open access
Caterina Zuffa, Marco Bardini, Mauricio Sevilla, Robinson Cortes–Huerto, Alessandro Greco, Lorenzo Soprani, +7 more
0citations -
Disorder Signatures Emerging at Millikelvin Temperatures \\in Si/SiGe Field-Effect Stacks2026 arXiv (Cornell University) preprint Physics and Astronomy Quantum and electron transport phenomena Open access
Lino Visser, Alberto Mistroni, Yuji Yamamoto, F. Fidorra, Oksana V. Fursenko, S. Marschmeyer, +6 more
0citations -
Stoichiometry and Termination Control of LaAlO3/SrTiO3 Bilayer Interfaces2020 Advanced Materials Interfaces article Materials Science Electronic and Structural Properties of Oxides Open access
Hong Yan, Jacqueline M. Börgers, Marc‐André Rose, Christoph Baeumer, Bongju Kim, Lei Jin, +2 more
15citations -
Quantitative Determination of Native Point‐Defect Concentrations at the ppm Level in Un‐Doped BaSnO3 Thin Films2022 Advanced Functional Materials article Materials Science Electronic and Structural Properties of Oxides Open access
Kendra Solveig Belthle, Ute N. Gries, Michael P. Mueller, Dennis Kemp, Abhinav Prakash, Marc‐André Rose, +4 more
14citations -
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K2024 Physical Review Materials article Physics and Astronomy Semiconductor materials and interfaces Open access
Malte Neul, Isabelle V. Sprave, Laura K. Diebel, Lukas G. Zinkl, Florian Fuchs, Yuji Yamamoto, +3 more
8citations -
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line2025 Applied Physics Letters article Physics and Astronomy Quantum and electron transport phenomena Open access
Alberto Mistroni, Marco Lisker, Yuji Yamamoto, Wei-Chen Wen, F. Fidorra, H. Tetzner, +10 more
2citations -
Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces2020 Advanced Materials article Materials Science Electronic and Structural Properties of Oxides Open access
Marc‐André Rose, Břetislav Šmíd, Mykhailo Vorokhta, Ivetta Slipukhina, Michael Andrä, Hendrik Bluhm, +6 more
37citations -
Halide perovskites: third generation photovoltaic materials empowered by metavalent bonding2020 arXiv (Cornell University) preprint Engineering Perovskite Materials and Applications Open access
Matthias Wuttig, Carl-Friedrich Schoen, Mathias Schumacher, John Robertson, Pavlo Golub, Éric Bousquet, +1 more
0citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene2023 ACS Nano article Materials Science Graphene research and applications Open access cited by 2 patents
Oliver J. Burton, Zachary Winter, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, +1 more
22citations -
Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene2020 ACS Applied Electronic Materials article Materials Science Graphene research and applications Open access cited by 4 patents
Sebastian Wittmann, Fabian Aumer, Doris Wittmann, Stephan Pindl, Stefan Wagner, Amit Gahoi, +4 more
21citations -
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
C. Mauder, Herwig Hahn, M Marx, Z. Gao, Robert Oligschlaeger, Thorsten Zweipfennig, +5 more
13citations -
Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO3/GdTiO3/SrTiO32021 Scientific Reports article Materials Science Electronic and Structural Properties of Oxides Open access
Martin Stehno, Abhimanyu Rana, Pim Reith, Nicolas Gauquelin, Johan Verbeeck, Hans Hilgenkamp, +2 more
10citations -
Enhanced Thermoelectric Properties by Embedding Fe Nanoparticles into CrN Films for Energy Harvesting Applications2024 ACS Applied Nano Materials article Materials Science Advanced Thermoelectric Materials and Devices Open access
Daria Pankratova, Khabib Yusupov, Alberto Vomiero, Sanath Kumar Honnali, Robert D. Boyd, Danièle Fournier, +4 more
9citations -
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates2025 Applied Physics Letters article Physics and Astronomy GaN-based semiconductor devices and materials
Liubou Padzialioshkina, Arno Kirchbrücher, Qi Ze Shu, Achim Noculak, Renato Negra, C. Mauder, +4 more
1citations -
Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and Applications2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) conference-paper Engineering Advanced Photonic Communication Systems Open access
Christian G. Koos, Sebastian Randel, W. Freude, Thomas Zwick, J. Christoph Scheytt, Jeremy Witzens, +13 more
1citations -
Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO32020 arXiv (Cornell University) preprint Materials Science Electronic and Structural Properties of Oxides Open access
Martin Stehno, Abhimanyu Rana, Pim Reith, Nicolas Gauquelin, Johan Verbeeck, Hans Hilgenkamp, +2 more
0citations