Indium Selenide/Antimonene Heterostructure for Multifunctional Optoelectronics

IEEE Transactions on Electron Devices, vol. 69, pp. 1155–1161

Abstract

Van der Waals (vdW) heterostructures identify the advantage of integrating excellent properties of the stacked two-dimensional (2-D) materials by vdW interactions, thereby have gained increasing attention in optoelectronic applications recently. However, heterostructures with type-II band aligning and direct bandgap are still scarce for optoelectronics. Herein, within the framework of density functional theory (DFT) calculations, we predict the indium selenide/antimonene heterostructure as a promising candidate for optoelectronic applications. The most energetically stable configuration of indium selenide/antimonene heterostructure presents a direct bandgap of 0.97 eV at HSE06 level. Remarkably, indium selenide/antimonene heterostructure exhibits a type-II band alignment, indicating its favorable capability of electron–hole separation. Carrier mobility computations show that indium selenide/antimonene heterostructure possesses both high electron mobility and hole mobility of up to 103cm2V−1s−1, which are superior to that of any individual monolayer InSe and antimonene. The light absorption and photocurrent calculations reveal that InSe/antimonene heterostructure is sensitive to visible and ultraviolet light. The power conversion efficiency of an indium selenide/antimonene thin-film solar cell is up to 17.2%. The multifunctionality endows the indium selenide/antimonene heterostructure a potential candidate for photovoltaic devices and photodetectors.

Authors 4

1. Kai Zheng

   Chongqing University · Technical University of Denmark

   Affiliation as printed

   Key Laboratory of Optoelectronic Technology and Systems, Education Ministry of China, and the College of Optoelectronic Engineering, Chongqing University, Chongqing, China

   Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark

2. Heping Cui Aachen Institute of Materials in Electrical Engineering 1

   Chongqing University · RWTH Aachen University

   Affiliation as printed

   Key Laboratory of Optoelectronic Technology and Systems, Education Ministry of China, and the College of Optoelectronic Engineering, Chongqing University, Chongqing, China

   Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Aachen, Germany

3. Jiabing Yu

   Chongqing University

   Affiliation as printed

   Key Laboratory of Optoelectronic Technology and Systems, Education Ministry of China, and the College of Optoelectronic Engineering, Chongqing University, Chongqing, China

4. Xianping Chen

   Chongqing University

   Affiliation as printed

   Key Laboratory of Optoelectronic Technology and Systems, Education Ministry of China, and the College of Optoelectronic Engineering, Chongqing University, Chongqing, China