Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device

European Mask and Lithography Conference (EMLC), pp. 36

Abstract

Universal quantum computers promise the possibility of solving certain computational problems significantly faster than classically possible. For relevant problems, millions of qubits are needed, which is only feasible with industrial production methods. This study presents an electron beam patterning process of gate electrodes for Si/SiGe electron spin qubits, which is compatible with modern CMOS semiconductor manufacturing. Using a pCAR e-beam resist, a process window is determined in which structure sizes of 50 nm line and 30 nm space can be reproducibly fabricated with reasonable throughput. Based on electrostatic simulations, we implemented a feedback loop to investigate the functionality of the gate electrode geometry under fabrication-induced variations.

Authors 17

1. Varvara Brackmann

   Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

   Affiliation as printed

   Fraunhofer IPMS, CNT (Germany)

2. Malte Neul Aachen JARA-Institut for Quantum Information

   RWTH Aachen University

   Affiliation as printed

   JARA-Institut for Quantum Information, RWTH Aachen University (Germany)

3. W. Langheinrich

   Infineon Technologies (Germany)

   Affiliation as printed

   Infineon Technologies Dresden GmbH & Co. KG (Germany)

4. Maik Simon

   Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

   Affiliation as printed

   Fraunhofer IPMS, CNT (Germany)

5. Pascal Muster

   Infineon Technologies (Germany)

   Affiliation as printed

   Infineon Technologies Dresden GmbH & Co. KG (Germany)

6. Sebastian Pregl

   Infineon Technologies (Germany)

   Affiliation as printed

   Infineon Technologies Dresden GmbH & Co. KG (Germany)

7. Arne Demmler

   Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

   Affiliation as printed

   Fraunhofer IPMS, CNT (Germany)

8. Norbert Hanisch

   Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

   Affiliation as printed

   Fraunhofer IPMS, CNT (Germany)

9. Maximilian Lederer

   Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

   Affiliation as printed

   Fraunhofer IPMS, CNT (Germany)

10. Jan Klos Aachen JARA-Institut for Quantum Information

    RWTH Aachen University

    Affiliation as printed

    JARA-Institut for Quantum Information, RWTH Aachen University (Germany)

11. Felix Reichmann

    Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    IHP Leibniz-Institut für innovative Mikroelektronik (Germany)

12. Yuji Yamamoto

    Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    IHP Leibniz-Institut für innovative Mikroelektronik (Germany)

13. Marcus Wislicenus

    Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

    Affiliation as printed

    Fraunhofer IPMS, CNT (Germany)

14. Claus Dahl

    Infineon Technologies (Germany)

    Affiliation as printed

    Infineon Technologies Dresden GmbH & Co. KG (Germany)

15. Lars R. Schreiber Aachen JARA-Institut for Quantum Information

    RWTH Aachen University

    Affiliation as printed

    JARA-Institut for Quantum Information, RWTH Aachen University (Germany)

16. Hendrik Bluhm Aachen JARA-Institut for Quantum Information

    RWTH Aachen University

    Affiliation as printed

    JARA-Institut for Quantum Information, RWTH Aachen University (Germany)

17. Benjamin Uhlig

    Fraunhofer Institute for Photonic Microsystems · Center Nanoelectronic Technologies

    Affiliation as printed

    Fraunhofer IPMS, CNT (Germany)