January 29, 2020 article Open access Inflection Phenomenon in Cryogenic MOSFET Behavior IEEE Transactions on Electron Devices DOI: 10.1109/ted.2020.2965475 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 13 stored of 63 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Ge/GeSn Quantum Well MOSFETs for Cryogenic Applications 2026 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design 0 citations Ultra-low-power cryogenic complementary metal oxide semiconductor technology 2025 Nature Reviews Electrical Engineering review Engineering Advancements in Semiconductor Devices and Circuit Design 18 citations Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene 2024 Nano Letters article Materials Science 2D Materials and Applications Open access 17 citations Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures 2024 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design 2 citations On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors* 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design 2 citations Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide 2023 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design 7 citations Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors 2023 physica status solidi (a) article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 6 citations Vertical GeSn nanowire MOSFETs for CMOS beyond silicon 2023 Communications Engineering article Engineering Advancements in Semiconductor Devices and Circuit Design Open access cited by 1 patent 50 citations Interface Engineering for Steep Slope Cryogenic MOSFETs 2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design 16 citations Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature 2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design 23 citations Cryogenic Steep Slope Field-Effect Transistors 2022 IEEE Silicon Nanoelectronics Workshop conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design 1 citations Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures 2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design cited by 2 patents 12 citations Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design 11 citations 13 results References 0