Cryogenic Steep Slope Field-Effect Transistors

IEEE Silicon Nanoelectronics Workshop, pp. 1–2

Abstract

The present paper studies with experiment and simulation a number of measures that improve current cryogenic MOSFETs to enable the device to be operated at very low supply voltages.

Authors 8

1. Joachim Knoch Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Institute of Semiconductor Electronics,Aachen,Germany,52074

2. Benjamin Richstein Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Institute of Semiconductor Electronics,Aachen,Germany,52074

3. Yi Han

   Forschungszentrum Jülich

   Affiliation as printed

   Forschungszentrum Jülich,Peter Grünberg Institute (PGI-9),Jülich,Germany,52428

4. Dirk König

   UNSW Sydney

   Affiliation as printed

   University of New South Wales,Sydney,New South Wales,Australia,2052

5. M. Frentzen Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Institute of Semiconductor Electronics,Aachen,Germany,52074

6. Lena Hellmich Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Institute of Semiconductor Electronics,Aachen,Germany,52074

7. Jan Klos Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Institute of Semiconductor Electronics,Aachen,Germany,52074

8. Qing‐Tai Zhao

   Forschungszentrum Jülich

   Affiliation as printed

   Forschungszentrum Jülich,Peter Grünberg Institute (PGI-9),Jülich,Germany,52428