MANIPULATION ZONE FOR QUBITS IN QUANTUM DOTS
Abstract
The invention relates to an electronic component (10) which is formed by a semiconductor component or a semiconductor-like structure with gate electrode arrangements (16, 18, 40) for manipulating the quantum state of qubits in quantum dots (52, 54), the component containing a substrate (12) containing a two-dimensional electron gas or electron-hole gas. Electrical contacts connect the gate electrode arrangements (16, 18, 40) to voltage sources. A first gate electrode arrangement (16) having gate electrodes (20, 22, 24, 26) is provided on a surface (14) of the electronic component (10) in order to create transportable potential wells (56, 58) in the substrate (12). A second gate electrode (40) creates a potential barrier which borders the first gate electrode arrangement (16). The gate electrode arrangements (16, 18, 40) have parallel electrode fingers (28, 30, 32, 34), the electrode fingers (28, 30, 32, 34) of the first gate electrode arrangement (16) being alternately connected together at intervals in order to cause almost continuous transport of the potential well (56, 58) through the substrate (12).
Inventors 3
- Matthias Künne Aachen author as filed: Künne, Matthias
- Hendrik Bluhm Aachen author as filed: Bluhm, Hendrik
- Lars R. Schreiber Aachen author as filed: Schreiber, Lars
Inventors are linked to an Aachen author when surname and first name match exactly one author.
Applicants
- RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN RWTH Aachen University
- Forschungszentrum Jülich GmbH
Cited papers 0 in the database
Non-patent literature as cited (1)
- [XAI] - VEIT LANGROCK: "Numerical and theoretical investigation of long-range coherent electron shuttling devices in Silicon/Silicon-Germanium quantum wells for scalable quantum computing", 30 November 2017 (2017-11-30), XP055757788, Retrieved from the Internet <URL:https://www.quantuminfo.physik.rwth-aachen.de/global/show_document.asp?id=aaaaaaaaabbnooi>