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Microstructural insights into the coercivity enhancement of grain-boundary-diffusion-processed Tb-treated Nd-Fe-B sintered magnets beyond the core-shell formation mechanism2021 Journal of Alloys and Compounds article Materials Science Magnetic Properties of Alloys Open access
Kristina Žagar Soderžnik, Kristina Žužek Rožman, Matej Komelj, András Kovács, Patrick Diehle, Thibaud Denneulin, +7 more
35citations -
Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses2022 Physical review. B./Physical review. B article Engineering Terahertz technology and applications
Fanqi Meng, Frederik Walla, Qamar ul-Islam, Alexej Pashkin, Harald Schneider, Christoph Jungemann, +2 more
11citations -
Dataset for DME oxidation behavior of commercial Pt/Pd-series diesel oxidation catalysts2025 Data in Brief data-paper Materials Science Catalytic Processes in Materials Science Open access
Tom Padeken, Alexander Lampkowski, Peter Mauermann, Werner Willems, Christian Nederlof, Björn Franzke, +3 more
2citations -
Large spin-shuttling oscillations enabling high-fidelity single-qubit gates2025 Physical Review Applied article Physics and Astronomy Quantum and electron transport phenomena Open access
Akshay Menon Pazhedath, Alessandro David, Max Oberländer, Matthias M. Müller, Tommaso Calarco, Hendrik Bluhm, +1 more
3citations -
Large spin-shuttling oscillations enabling high-fidelity single-qubit gates2025 Physical Review Applied article Physics and Astronomy Quantum and electron transport phenomena Open access
Akshay Menon Pazhedath, Alessandro David, Max Oberländer, Matthias M. Müller, Tommaso Calarco, Hendrik Bluhm, +1 more
1citations -
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties2020 IEEE Journal of the Electron Devices Society article Materials Science Graphene research and applications Open access cited by 4 patents
Muhammad Asad, Marlene Bonmann, Xinxin Yang, Andrei Vorobiev, Kjell Jeppson, Luca Banszerus, +4 more
23citations -
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Lars Heuken, M. Kortemeyer, Alessandro Ottaviani, M. Alomari, Dirk Fahle, M. Marx, +4 more
38citations -
Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Alessandro Ottaviani, Paula Palacios, Thorsten Zweipfennig, M. Alomari, Carsten Beckmann, David Bierbüsse, +6 more
11citations -
Coherence Protection for Mobile Spin Qubits in Silicon (Raw Data)2026 Zenodo (CERN European Organization for Nuclear Research) dataset Physics and Astronomy Quantum and electron transport phenomena Open access
Jan A. Krzywda, Yuta Matsumoto, Maxim De Smet, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, +3 more
0citations -
Coherence Protection for Mobile Spin Qubits in Silicon (Raw Data)2026 Zenodo (CERN European Organization for Nuclear Research) dataset Physics and Astronomy Quantum and electron transport phenomena Open access
Jan A. Krzywda, Yuta Matsumoto, Maxim De Smet, Larysa Tryputen, Sander L. de Snoo, Sergey Vladimirovich Amitonov, +3 more
0citations