Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
npj 2D Materials and Applications, vol. 9
Abstract
Abstract Threshold switching (TS) is a non-permanent change in electrical resistance controlled by voltage modulation in two-terminal devices. Silver (Ag) filament-based TS has been observed in two-dimensional transition metal dichalcogenides, which are promising due to their van der Waals gaps, facilitating ion migration and filament formation without disturbing covalent bonds. This work demonstrates the heterostructure growth of vertically aligned molybdenum disulfide (VAMoS 2 ) with an amorphous silicon oxide (SiO x ) layer after sulfurization. Ag ion migration through this material stack enables TS. Our Ag/SiO x /VAMoS 2 /Au devices exhibit low switching voltages of ~0.63 V, high on-state currents over 200 μA, and stable switching exceeding 10⁴ cycles. A physics-based dynamical model identifies two rate-limiting steps for filament formation, and the simulated switching kinetics align with experimental results. Our devices achieve fast switching in 311 ns and spontaneous relaxation in 233 ns. These findings advance understanding of switching mechanisms and highlight their potential for memory and neuromorphic computing applications.
Authors 11
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Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
JARA-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbH, Jülich, Germany
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Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
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Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
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Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
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Ke Ran Aachen AMO GmbH Advanced Microelectronic Center Aachen Central Facility for Electron Microscopy
Forschungszentrum Jülich · Ernst Ruska Centre · AMO (Germany) · RWTH Aachen University
Affiliation as printed
AMO GmbH, Advanced Microelectronic Center Aachen, Aachen, Germany
Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich, Germany
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Affiliation as printed
Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany
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Forschungszentrum Jülich · Ernst Ruska Centre · RWTH Aachen University
Affiliation as printed
Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich, Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
JARA-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbH, Jülich, Germany
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University of Stuttgart · RWTH Aachen University
Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
Institute of Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany
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Max C. Lemme corresponding Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices
AMO (Germany) · RWTH Aachen University
Affiliation as printed
AMO GmbH, Advanced Microelectronic Center Aachen, Aachen, Germany
Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
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