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Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

npj 2D Materials and Applications, vol. 9

Abstract

Abstract Threshold switching (TS) is a non-permanent change in electrical resistance controlled by voltage modulation in two-terminal devices. Silver (Ag) filament-based TS has been observed in two-dimensional transition metal dichalcogenides, which are promising due to their van der Waals gaps, facilitating ion migration and filament formation without disturbing covalent bonds. This work demonstrates the heterostructure growth of vertically aligned molybdenum disulfide (VAMoS 2 ) with an amorphous silicon oxide (SiO x ) layer after sulfurization. Ag ion migration through this material stack enables TS. Our Ag/SiO x /VAMoS 2 /Au devices exhibit low switching voltages of ~0.63 V, high on-state currents over 200 μA, and stable switching exceeding 10⁴ cycles. A physics-based dynamical model identifies two rate-limiting steps for filament formation, and the simulated switching kinetics align with experimental results. Our devices achieve fast switching in 311 ns and spontaneous relaxation in 233 ns. These findings advance understanding of switching mechanisms and highlight their potential for memory and neuromorphic computing applications.

Authors 11

  1. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

  2. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    JARA-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbH, Jülich, Germany

  3. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

  4. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

  5. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

  6. Forschungszentrum Jülich · Ernst Ruska Centre · AMO (Germany) · RWTH Aachen University

    Affiliation as printed

    AMO GmbH, Advanced Microelectronic Center Aachen, Aachen, Germany

    Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany

    Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich, Germany

  7. RWTH Aachen University

    Affiliation as printed

    Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany

  8. Forschungszentrum Jülich · Ernst Ruska Centre · RWTH Aachen University

    Affiliation as printed

    Central Facility for Electron Microscopy, RWTH Aachen University, Aachen, Germany

    Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich, Germany

  9. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    JARA-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbH, Jülich, Germany

  10. University of Stuttgart · RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

    Institute of Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany

  11. AMO (Germany) · RWTH Aachen University

    Affiliation as printed

    AMO GmbH, Advanced Microelectronic Center Aachen, Aachen, Germany

    Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany

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References 67