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Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials

Abstract

ABSTRACT Memristors based on 2D materials have garnered significant attention. Their fast resistive switching (RS) behavior and atomic‐level thickness enable low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS 2 ) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. In this study, we demonstrate wafer‐scale memristors based on metal–organic chemical vapor‐deposited MoS 2 . Our devices exhibit both volatile and nonvolatile RS behaviors, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), set and reset voltages within ±1 V, endurance of over 2500 cycles, and state retention over 10 6 s. Among 100 tested devices, 98 exhibited IRS behavior, confirming a high yield (98%) and demonstrating its robust and reproducible RS nature. Combined experimental and simulation results further indicate that the IRS arises from the lateral growth of CFs in the van der Waals gaps. Furthermore, the devices successfully emulate synaptic plasticity with current responses on a microsecond timescale, highlighting their potential for large‐scale integration in neuromorphic computing architectures.

Authors 20

  1. RWTH Aachen University · AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

  2. RWTH Aachen University

    Affiliation as printed

    Institute of Materials in Electrical Engineering and Information Technology II (IWE2) RWTH Aachen University Aachen Germany

  3. RWTH Aachen University · AMO (Germany) · Forschungszentrum Jülich · Ernst Ruska Centre

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

    Central Facility for Electron Microscopy (GFE) RWTH Aachen University Aachen Germany

    Ernst Ruska‐Centre for Microscopy and Spectroscopy with Electrons (ER‐C 2) Forschungszentrum Jülich GmbH Jülich Germany

  4. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 7 (PGI 7) and JARA‐FIT Forschungszentrum Jülich GmbH Jülich Germany

  5. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

  6. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

  7. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

  8. RWTH Aachen University

    Affiliation as printed

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

  9. Eindhoven University of Technology

    Affiliation as printed

    Department of Applied Physics and Science Education Eindhoven University of Technology Eindhoven The Netherlands

  10. AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

  11. AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

  12. AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

  13. RWTH Aachen University

    Affiliation as printed

    Compound Semiconductor Technology (CST) RWTH Aachen University Aachen Germany

  14. RWTH Aachen University · Aixtron (Germany)

    Affiliation as printed

    AIXTRON SE Herzogenrath Germany

    Compound Semiconductor Technology (CST) RWTH Aachen University Aachen Germany

  15. RWTH Aachen University

    Affiliation as printed

    Compound Semiconductor Technology (CST) RWTH Aachen University Aachen Germany

  16. RWTH Aachen University · Forschungszentrum Jülich · Ernst Ruska Centre

    Affiliation as printed

    Central Facility for Electron Microscopy (GFE) RWTH Aachen University Aachen Germany

    Ernst Ruska‐Centre for Microscopy and Spectroscopy with Electrons (ER‐C 2) Forschungszentrum Jülich GmbH Jülich Germany

  17. AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

  18. Forschungszentrum Jülich · Bulgarian Academy of Sciences · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 7 (PGI 7) and JARA‐FIT Forschungszentrum Jülich GmbH Jülich Germany

    “Acad. Evgeni Budevski” IEE‐BAS Bulgarian Academy of Sciences (BAS) Sofia Bulgaria

  19. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 7 (PGI 7) and JARA‐FIT Forschungszentrum Jülich GmbH Jülich Germany

  20. RWTH Aachen University · AMO (Germany)

    Affiliation as printed

    AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany

    Chair of Electronic Devices (ELD) RWTH Aachen University Aachen Germany

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References 66