Synthesis and Characterization of Nitrogen-Doped Crystallized SiC Films from Liquid Precursors

ACS Applied Electronic Materials, vol. 7, pp. 1142–1150

Abstract

High Resolution Image Download MS PowerPoint Slide Silicon carbide (SiC) is an established material for photovoltaics and other semiconductor devices due to its wide band gap and high thermal stability. Traditional deposition systems for thin, doped SiC layers are often costly and complex. This study investigates the use of 1,4-disilabutane as a low-cost liquid precursor with a rather low decomposition temperature for the deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films at atmospheric pressure. Nitrogen doping was achieved using 1,1,3,3-tetramethyldisilazane. The films were characterized by Fourier-transform infrared spectroscopy, Raman spectroscopy, secondary ion mass spectrometry, and conductivity measurements. Optimizing the deposition temperature maximized the Si–C bond density. Crystallization was induced by annealing at temperatures between 800 and 1100 °C, resulting in a three-order-of-magnitude increase in conductivity. The highest conductivity achieved was 0.03 S cm –1 for crystalline, N-doped SiC films. This cost-effective method for producing highly conductive, crystalline SiC films offers significant potential for industrial applications.

Authors 8

1. Benedikt Fischer corresponding Aachen

   RWTH Aachen University · Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

   Jülich Aachen Research Alliance (JARA-Energy) and Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Schinkelstr. 2, 52062 Aachen, Germany

2. Maurice Nuys

   Forschungszentrum Jülich · FH Münster

   Affiliation as printed

   Department of Energy Building Services Environmental Engineering, University of Applied Sciences Muenster, Stegerwaldstraße 39, 48565 Steinfurt, Germany

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

3. Stefan Haas Aachen Department of Aerospace Engineering

   FH Aachen · Forschungszentrum Jülich

   Affiliation as printed

   Department of Aerospace Engineering

   FH Aachen University of Applied Sciences

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

   Department of Aerospace Engineering, FH Aachen University of Applied Sciences, 52066 Aachen, Germany

4. Oliver Thimm

   Forschungszentrum Jülich

   Affiliation as printed

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

5. G. Schöpe

   Forschungszentrum Jülich

   Affiliation as printed

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

6. Pascal Foucart

   Forschungszentrum Jülich

   Affiliation as printed

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

7. Astrid Besmehn

   Forschungszentrum Jülich

   Affiliation as printed

   IET-4 Elektrochemische Verfahrenstechnik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

8. Uwe Rau Aachen

   RWTH Aachen University · Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   IMD-3 Photovoltaik, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Straße, 52425 Jülich, Germany

   Jülich Aachen Research Alliance (JARA-Energy) and Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Schinkelstr. 2, 52062 Aachen, Germany