Multiparameter Admittance Spectroscopy for Investigating Defects in MoS₂ Thin-Film MOSFETs

IEEE Transactions on Electron Devices, vol. 72, pp. 1506–1513

Abstract

We present a method for assessing the quality of electronic material properties of thin-film metal–oxide–semiconductor field-effect transistors (MOSFETs). By investigating samples with metal-organic-chemical-vapor-deposition (MOCVD)-grown molybdenum disulfide (MoS2) channels exposed to atmospheric conditions, we reveal the existence of electron traps in MoS2 and at the interface between the gate insulator and the thin-film MoS2. Differential conductance and capacitance data of the transistor channels are plotted as 3-D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.

Authors 7

1. Eros Reato Aachen Chair of Electronics Devices

   RWTH Aachen University

   Affiliation as printed

   Chair of Electronics Devices, RWTH Aachen University, Aachen, Germany

2. Ardeshir Esteki Aachen Chair of Electronics Devices

   RWTH Aachen University

   Affiliation as printed

   Chair of Electronics Devices, RWTH Aachen University, Aachen, Germany

3. Benny Ku Aachen Chair of Electronics Devices

   RWTH Aachen University

   Affiliation as printed

   Chair of Electronics Devices, RWTH Aachen University, Aachen, Germany

4. Zhenxing Wang Aachen AMO GmbH

   AMO (Germany)

   Affiliation as printed

   AMO GmbH, Aachen, Germany

5. M. Heuken

   Aixtron (Germany)

   Affiliation as printed

   AIXTRON SE, Herzogenrath, Germany

6. Max C. Lemme Aachen Chair of Electronics Devices

   RWTH Aachen University

   Affiliation as printed

   Chair of Electronics Devices, RWTH Aachen University, Aachen, Germany

7. Olof Engström Aachen AMO GmbH

   AMO (Germany)

   Affiliation as printed

   AMO GmbH, Aachen, Germany