September 24, 2010 article Open access Atomically Thin MoS 2 : A New Direct-Gap Semiconductor Physical Review Letters DOI: 10.1103/physrevlett.105.136805 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 26 stored of 15,446 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 2 citations Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics 2026 Physica Scripta article Materials Science 2D Materials and Applications Open access 0 citations Defect-engineered competition between exciton annihilation and trapping in MOCVD WS 2 2025 Chemical Science article Materials Science 2D Materials and Applications Open access 2 citations Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach 2025 Advanced Materials Interfaces article Materials Science 2D Materials and Applications Open access 1 citations Unoccupied bands in the molybdenum dichalcogenides MoS 2 , MoSe 2 , and MoTe 2 2025 Physical review. B./Physical review. B article Materials Science 2D Materials and Applications Open access 2 citations 1D and 2D nanostructures of transition metal dichalcogenides: Toward functional devices and sustainable technologies 2025 Materials Science and Engineering R Reports article Materials Science 2D Materials and Applications 7 citations Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM 2025 APL Materials article Materials Science 2D Materials and Applications Open access 8 citations Multiparameter Admittance Spectroscopy for Investigating Defects in MoS₂ Thin-Film MOSFETs 2025 IEEE Transactions on Electron Devices article Materials Science 2D Materials and Applications Open access 1 citations Hyperspectral photoluminescence and reflectance microscopy of 2D materials 2023 Measurement Science and Technology article Materials Science 2D Materials and Applications Open access 8 citations Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2 2023 Surfaces article Materials Science 2D Materials and Applications Open access 9 citations The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure 2023 The Journal of Physical Chemistry C article Materials Science 2D Materials and Applications Open access 4 citations Roadmap on chalcogenide photonics 2022 Journal of Physics Photonics article Materials Science Phase-change materials and chalcogenides Open access 42 citations Engineering spin-orbit effects and Berry curvature by deposition of a monolayer of Eu on WSe2 2022 Physical review. B./Physical review. B article Materials Science 2D Materials and Applications Open access 5 citations Detailed study on MOCVD of wafer-scale MoS2 monolayers: From nucleation to coalescence 2022 MRS Advances article Materials Science 2D Materials and Applications Open access 18 citations Realization of nearly dispersionless bands with strong orbital anisotropy from destructive interference in twisted bilayer MoS2. 2021 PubMed article Materials Science 2D Materials and Applications Open access 114 citations Realization of nearly dispersionless bands with strong orbital anisotropy from destructive interference in twisted bilayer MoS2 2021 Nature Communications article Materials Science 2D Materials and Applications Open access 0 citations Growth, domain structure, and atomic adsorption sites of hBN on the Ni(111) surface 2021 Physical Review Materials article Materials Science Boron and Carbon Nanomaterials Research 10 citations Realization of nearly dispersionless bands with strong orbital anisotropy from destructive interference in twisted bilayer MoS2 2020 Research Square preprint Materials Science 2D Materials and Applications Open access 27 citations Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2 2020 Advanced Materials Interfaces article Materials Science 2D Materials and Applications Open access 16 citations Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2 2020 ACS Photonics article Materials Science 2D Materials and Applications Open access 92 citations 1–20 of 26 Page 1 / 2 Next → References 0