Insulators for 2D nanoelectronics: the gap to bridge

Nature Communications, vol. 11, pp. 3385

Abstract

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

Authors 11

1. Yu. Yu. Illarionov corresponding

   TU Wien · Ioffe Institute

   Affiliation as printed

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria. illarionov@iue.tuwien.ac.at

   Ioffe Physical-Technical Institute, Polytechnicheskaya 26, St-Petersburg, Russia, 194021. illarionov@iue.tuwien.ac.at

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27–29, 1040, Vienna, Austria

2. Theresia Knobloch

   TU Wien

   Affiliation as printed

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27–29, 1040, Vienna, Austria

3. Markus Jech

   TU Wien

   Affiliation as printed

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria

   Institute for Microelectronics (TU Wien), Gusshausstrasse 27–29, 1040, Vienna, Austria

4. Mario Lanza

   Soochow University · Collaborative Innovation Center of Suzhou Nano Science and Technology

   Affiliation as printed

   Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Building 910, 215123, Suzhou, China

5. Deji Akinwande

   The University of Texas at Austin

   Affiliation as printed

   The University of Texas at Austin, 10100 Burnet Rd. 160, Austin, TX, 78758, USA

6. Mikhail I. Vexler

   Ioffe Institute

   Affiliation as printed

   Ioffe Physical-Technical Institute, Polytechnicheskaya 26, St-Petersburg, Russia, 194021

7. Thomas Mueller

   TU Wien

   Affiliation as printed

   Institute for Photonics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria

   Institute for Photonics (TU Wien), Gusshausstrasse 27–29, 1040, Vienna, Austria

8. Max C. Lemme Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074, Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074, Aachen, Germany

9. Gianluca Fiori

   University of Pisa

   Affiliation as printed

   Dipartimento di Ingegneria dell'Informazione, Università di Pisa, 56122, Pisa, Italy

   Dipartimento di Ingegneria dell’Informazione, Università di Pisa, 56122, Pisa, Italy

10. Frank Schwierz

    Technische Universität Ilmenau

    Affiliation as printed

    Institute for Micro- and Nanoelectronics, Technical University Ilmenau, PF 100565, 98684, Ilmenau, Germany

11. Tibor Grasser corresponding

    TU Wien

    Affiliation as printed

    Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria. grasser@iue.tuwien.ac.at

    Institute for Microelectronics (TU Wien), Gusshausstrasse 27–29, 1040, Vienna, Austria