August 08, 2013 article Flexible and Transparent MoS 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures ACS Nano DOI: 10.1021/nn402954e OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 1,098 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications 2023 Advanced Electronic Materials article Materials Science 2D Materials and Applications Open access 48 citations Flexible Large‐Area Light‐Emitting Devices Based on WS 2 Monolayers 2020 Advanced Optical Materials article Materials Science 2D Materials and Applications Open access 58 citations Insulators for 2D nanoelectronics: the gap to bridge 2020 Nature Communications article Materials Science 2D Materials and Applications Open access cited by 3 patents 561 citations 3 results References 0