2D MoS 2 -Based Threshold Switching Memristor for Artificial Neuron

• Influence of Metal–Organic Chemical Vapor Deposition MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability

  2026 ACS Applied Electronic Materials article Engineering Advanced Memory and Neural Computing Open access

  0

  citations
• Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors

  2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access

  2

  citations
• Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2

  2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access

  2

  citations
• Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

  2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access

  7

  citations
• Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

  2025 Nano Letters article Engineering Advanced Memory and Neural Computing Open access

  21

  citations
• Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers

  2025 IEEE Electron Devices Technology & Manufacturing Conference (EDTM) conference-paper Engineering Advanced Memory and Neural Computing

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  citations
• Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

  2025 Small Science article Engineering Advanced Memory and Neural Computing Open access

  23

  citations

7 results