Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers
IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1–3
Abstract
In this work, we investigate for the first time the resistive switching (RS) behavior in a bilayer stack of$\text{SiO}_{\mathrm{x}}$and vertically aligned$\text{MoS}_{2}\left(\text{VAMoS}_{2}\right)$. We demonstrate threshold switching by forming silver (Ag) conductive filaments (CFs) in an amorphous$\text{SiO}_{\mathrm{x}}$layer combined with$\text{VAMoS}_{2}$obtained through molybdenum (Mo) sulfurization. The$\text{SiO}_{\mathrm{x}} / \text{VAMoS}_{2}$devices exhibit repeatable RS with faster switching times and higher hold voltages compared to$\text{SiO}_{\mathrm{x}}$devices without$\text{VAMoS}_{2}$. The RS enhancement through$\text{VAMoS}_{2}$layers shows promise for compact vertical device architectures for emerging memories and neuromorphic computing applications.
Authors 8
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
-
Affiliation as printed
AMO GmbH,Advanced Microelectronic Center Aachen,Aachen,Germany
-
Joachim Mayer Aachen
Affiliation as printed
RWTH Aachen University,Central Facility for Electron Microscopy,Aachen,Germany
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
-
Affiliation as printed
RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany
Cited by 0 stored of 0
No patents citing this paper on Lens.org (checked 2026-10-06).
References 7
7 results