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Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers

IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1–3

Abstract

In this work, we investigate for the first time the resistive switching (RS) behavior in a bilayer stack of$\text{SiO}_{\mathrm{x}}$and vertically aligned$\text{MoS}_{2}\left(\text{VAMoS}_{2}\right)$. We demonstrate threshold switching by forming silver (Ag) conductive filaments (CFs) in an amorphous$\text{SiO}_{\mathrm{x}}$layer combined with$\text{VAMoS}_{2}$obtained through molybdenum (Mo) sulfurization. The$\text{SiO}_{\mathrm{x}} / \text{VAMoS}_{2}$devices exhibit repeatable RS with faster switching times and higher hold voltages compared to$\text{SiO}_{\mathrm{x}}$devices without$\text{VAMoS}_{2}$. The RS enhancement through$\text{VAMoS}_{2}$layers shows promise for compact vertical device architectures for emerging memories and neuromorphic computing applications.

Authors 8

  1. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

  2. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

  3. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

  4. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

  5. AMO (Germany)

    Affiliation as printed

    AMO GmbH,Advanced Microelectronic Center Aachen,Aachen,Germany

  6. Joachim Mayer Aachen

    RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Central Facility for Electron Microscopy,Aachen,Germany

  7. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

  8. RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany

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