Effects of Self-Heating on ${f}_{\text{T}}$ and ${f}_{\text{max}}$ Performance of Graphene Field-Effect Transistors

IEEE Transactions on Electron Devices, vol. 67, pp. 1277–1284

Abstract

It has been shown that there can be a significant temperature increase in graphene field-effect transistors (GFETs) operating under high drain bias, which is required for power gain. However, the possible effects of self-heating on the high-frequency performance of GFETs have been weakly addressed so far. In this article, we report on an experimental and theoretical study of the effects of self-heating on dc and high-frequency performance of GFETs by introducing a method that allows accurate evaluation of the effective channel temperature of GFETs with a submicrometer gate length. In the method, theoretical expressions for the transit frequency (fT) and the maximum frequency of oscillation (fmax) based on the small-signal equivalent circuit parameters are used in combination with the models of the field- and temperature-dependent charge carrier concentration, velocity, and saturation velocity of GFETs. The thermal resistances found by our method are in good agreement with those obtained by the solution of the Laplace equation and by the method of thermo-sensitive electrical parameters. Our experiments and modeling indicate that the self-heating can significantly degrade the fTand fmaxof GFETs at power densities above 1 mW/μm2, from approximately 25 to 20 GHz. This article provides valuable insights for further development of GFETs, taking into account the self-heating effects on the high-frequency performance.

Authors 9

1. Marlene Bonmann

   Chalmers University of Technology

   Affiliation as printed

   Terahertz and Millimetre Wave Laboratory, Chalmers University of Technology, Gothenburg, Sweden

2. Marijana Krivić

   Chalmers University of Technology

   Affiliation as printed

   Terahertz and Millimetre Wave Laboratory, Chalmers University of Technology, Gothenburg, Sweden

3. Xinxin Yang

   Chalmers University of Technology

   Affiliation as printed

   Terahertz and Millimetre Wave Laboratory, Chalmers University of Technology, Gothenburg, Sweden

4. Andrei Vorobiev

   Chalmers University of Technology

   Affiliation as printed

   Terahertz and Millimetre Wave Laboratory, Chalmers University of Technology, Gothenburg, Sweden

5. Luca Banszerus Aachen 2nd Institute of Physics

   RWTH Aachen University

   Affiliation as printed

   2nd Institute of Physics, RWTH Aachen University, Aachen, Germany

6. Christoph Stampfer Aachen 2nd Institute of Physics

   RWTH Aachen University

   Affiliation as printed

   2nd Institute of Physics, RWTH Aachen University, Aachen, Germany

7. Martin Otto Aachen Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany

8. Daniel Neumaier Aachen Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany

9. Jan Stake

   Chalmers University of Technology

   Affiliation as printed

   Terahertz and Millimetre Wave Laboratory, Chalmers University of Technology, Gothenburg, Sweden