May 12, 2012 article Hysteresis in Single-Layer MoS 2 Field Effect Transistors ACS Nano DOI: 10.1021/nn301572c OpenAlex Authors 0 Author list not loaded yet. Cited by 9 stored of 1,127 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics 2026 Physica Scripta article Materials Science 2D Materials and Applications Open access 0 citations Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe 2 and n‐type MoS 2 2024 physica status solidi (a) article Materials Science 2D Materials and Applications Open access 15 citations Fabrication, characterization and application of Si₁₋ₓ₋ᵧGeₓSnᵧ alloys 2024 dissertation Engineering Advancements in Semiconductor Devices and Circuit Design Open access 0 citations Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications 2023 Advanced Electronic Materials article Materials Science 2D Materials and Applications Open access 48 citations Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning 2022 Nature Electronics article Materials Science Graphene research and applications Open access 140 citations Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN 2022 Advanced Electronic Materials article Materials Science 2D Materials and Applications Open access cited by 1 patent 36 citations How Photoinduced Gate Screening and Leakage Currents Dynamically Change the Fermi Level in 2D Materials 2020 physica status solidi (RRL) - Rapid Research Letters article Materials Science 2D Materials and Applications Open access 0 citations How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials 2020 arXiv (Cornell University) preprint Materials Science 2D Materials and Applications Open access 6 citations Photomodulation of Charge Transport in All‐Semiconducting 2D–1D van der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect 2020 Advanced Materials article Materials Science 2D Materials and Applications Open access 34 citations 9 results References 0