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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
C. Mauder, Herwig Hahn, M Marx, Z. Gao, Robert Oligschlaeger, Thorsten Zweipfennig, +5 more
13citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Alessandro Ottaviani, Paula Palacios, Thorsten Zweipfennig, M. Alomari, Carsten Beckmann, David Bierbüsse, +6 more
11citations -
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs2020 IEEE Transactions on Electron Devices article Physics and Astronomy GaN-based semiconductor devices and materials
Lars Heuken, M. Kortemeyer, Alessandro Ottaviani, M. Alomari, Dirk Fahle, M. Marx, +4 more
38citations -
Diagnosing Thermal-Interface Aging of Power Devices Using Self-Sensing2024 IEEE Transactions on Power Electronics article Engineering Silicon Carbide Semiconductor Technologies
Isabel Austrup, Christoph H. van der Broeck, Sven Kalker, Tianlong B. Albert, Fabian Janoth, Rik W. De Doncker
4citations -
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency2021 Electronics Letters article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, H. Kalisch, +2 more
1citations
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