Not finding it? Sign in to also search OpenAlex live.
-
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials Open access
C. Mauder, Herwig Hahn, M Marx, Z. Gao, Robert Oligschlaeger, Thorsten Zweipfennig, +5 more
13citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency2021 Electronics Letters article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, H. Kalisch, +2 more
1citations
5 results