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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Universal properties of boundary and interface charges in continuum models of one-dimensional insulators2021 Physical review. B./Physical review. B article Physics and Astronomy Topological Materials and Phenomena Open access
Sebastian Miles, Dante Marvin Kennes, Herbert Schoeller, Mikhail Pletyukhov
2citations -
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials cited by 5 patents
Arne Debald, Simon Kotzea, H Ahmadsad, M. Heuken, H. Kalisch, Andrei Vescan
6citations -
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx2024 Physical Review Materials article Physics and Astronomy Semiconductor materials and interfaces Open access
Agnieszka Anna Corley‐Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner, Costanza Lucia Manganelli, Omar Concepción, Oliver Skibitzki, +4 more
5citations -
PROOF OF CONCEPT OF CBCT OF THE HUMAN ORBIT FOR OCULAR UP-RIGHT PROTON BEAM THERAPY2026 International Journal of Particle Therapy article Physics and Astronomy Advanced Radiotherapy Techniques Open access
Nadine Dam, Roberto Lonati, A. J. van Lange, Wissam El Hakimi, Martijn Hol, Alfred Van Immerseel, +3 more
0citations
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