Not finding it? Sign in to also search OpenAlex live.
-
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory2021 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing Open access
Stefan Wiefels, Moritz von Witzleben, Michael Hüttemann, U. Böttger, Rainer M. Waser, Stephan Menzel
39citations -
In-Gap States of HfO2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices2022 ACS Applied Nano Materials article Engineering Advanced Memory and Neural Computing Open access
Niclas Schmidt, Konstantin Z. Rushchanskii, Urška Trstenjak, Regina Dittmann, Silvia Karthäuser
8citations -
Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Thomas Heisig, Kristof Lange, Alexander Gutsche, Kalle Goß, Sebastian Hambsch, Andrea Locatelli, +4 more
43citations -
Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism2020 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access
Gianluca Milano, Federico Raffone, Michael Luebben, Luca Boarino, Giancarlo Cicero, Ilia Valov, +1 more
36citations -
Current Compliance‐Driven Morphological Evolution of Conductive Filaments in ECM Cells: Mechanisms, Switching Regimes, and Thermal Effects2025 Advanced Materials Technologies article Engineering Advanced Memory and Neural Computing Open access
Milan Buttberg, Christina Schindler, Ilia Valov, Stephan Menzel
3citations -
Variability Reduction with Bilayer RRAM Device2023 International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) conference-paper Engineering Advanced Memory and Neural Computing
Tim Kempen, Ankit Bende, Regina Dittmann, Christopher Bengel, André Zambanini, Dennis Nielinger, +2 more
0citations -
Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften0citations
-
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, +5 more
7citations -
Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors2021 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access
Solomon Amsalu Chekol, Stephan Menzel, Rana Walied Ahmad, Rainer M. Waser, Susanne Hoffmann‐Eifert
135citations -
Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Solomon Amsalu Chekol, Stephan Menzel, Rainer M. Waser, Susanne Hoffmann‐Eifert
27citations
24 results