Variability Reduction with Bilayer RRAM Device
International Workshop on Cellular Nanoscale Networks and their Applications (CNNA), vol. 6, pp. 1–4
Abstract
The inherent stochastic behavior of filamentary switching introduces significant cycle-to-cycle (C2C) fluctuations in the device characteristics, which poses a challenge to the practical applications of resistive random-access memories (RRAMs). Here, we report a simple bilayer oxide-based device structure of$\mathbf{TaO}_{\mathbf{x}}$/HfO2on a 180-nm CMOS substrate to address this variability issue and improve the overall performance of the memory device. The improved switching variability in the bilayer stack is attributed to the incorporation of a conductive$\mathbf{TaO}_{\mathbf{x}}$thin film, which serves as the switching layer after the conductive filament formation in HfO2. More specifically, the switching happens at the interface between the conductive filament and$\mathbf{TaO}_{\mathbf{x}}$and exhibits a more gradual and less stochastic behavior than filamentary switching. As a result, 3-bit multi-level non-overlapping switching can be demonstrated in$\mathbf{TaO}_{\mathbf{x}}$/HfO2bilayer RRAM devices. These findings could be crucial for the high density data storage applications of RRAMs.
Authors 8
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Affiliation as printed
Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH
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Affiliation as printed
Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH
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Affiliation as printed
Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH
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Affiliation as printed
IWE-2 RWTH,Aachen,Germany
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Affiliation as printed
Forschungszentrum Jülich GmbH,ZEA-2
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Affiliation as printed
Forschungszentrum Jülich GmbH,ZEA-2
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Affiliation as printed
Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH
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Affiliation as printed
Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH
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