Predictive Reliability Modeling for NSFET Optimization---Part I: Carrier Transport and Heat Generation

IEEE Transactions on Electron Devices, vol. 73, pp. 4558–4571

Abstract

We presentimecSHE, a 3-D deterministic Boltzmann transport equation (BTE) solver for computing heat generation in realistic devices. Input-power-scaled Gaussian heat-generation profiles are shown to overestimate heating in the nanosheet-FET (NSFET) by an order of magnitude. Our simulations resolve the 3-D topology of heat generation and show that lowering the carrier effective mass can significantly reduce heating. Mobility-inferred effective mass is further employed to qualitatively study the channel reorientation effect on heat generation. Along theimecroadmap A14$\rightarrow $A3 scaling, p-FETs benefit the most with the heat-fraction (HF) dropping from 0.76% to 0.32%, while the n-FET HF is nearly unchanged. Finally, scaling studies identify actionable levers. Shorter channels and smaller drain size reduce heat. By providing physics-based heat-generation profiles in realistic 3-D devices instead of assumed heat sources,imecSHE enables quantitative optimization of device and process design to suppress heat generation for technology pathfinding.

Authors 11

1. Ethan Kao

   IMEC

   Affiliation as printed

   imec

2. Christoph Jungemann Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University

3. Michel Houssa

   IMEC

   Affiliation as printed

   imec

4. Alexander Makarov

   IMEC

   Affiliation as printed

   imec

5. F. M. Bufler

   IMEC

   Affiliation as printed

   imec

6. Sheng Qiang Yang

   IMEC

   Affiliation as printed

   imec

7. Maarten L. Van de Put

   IMEC

   Affiliation as printed

   imec

8. Geert Hellings

   IMEC

   Affiliation as printed

   imec

9. Adrian Vaisman Chasin

   IMEC

   Affiliation as printed

   imec

10. B. Kaczer

    IMEC

    Affiliation as printed

    imec

11. Stanislav E. Tyaginov

    IMEC

    Affiliation as printed

    imec