Replacing Doping in Nano-Silicon: Ultimate Miniaturization, Energy Efficiency, and Cryo-Functionality

ACS Applied Materials & Interfaces, vol. 17, pp. 52325–52335

Abstract

Abstract Hard entropy limits of impurity doping prevent further miniaturization of low nanoscale silicon-based very large scale integration (VLSI) devices, thereby obstructing the path toward more energy-efficient VLSI designs with higher yield in compute power. As demonstrated here by synchrotron UV photoelectron spectroscopy (UPS) and X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY), intrinsic Si at the bottom of the nanoscale (i-nano-Si) turns into strong p- or n-Si by embedding in silicon nitride (Si3N4) or silicon dioxide (SiO2), respectively. The associated Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS) creates a p/n junction in i-nano-Si by the quantum-chemical impact of Si3N4- vs SiO2-coating, providing energy landscapes to accumulate electrons (holes) when SiO2- (Si3N4-) coated, with free charge carriers provided by metallic interconnects. Hybrid density functional theory (h-DFT) calculations demonstrate Si NWire FETs with physical gate lengths down to 3 nm, while the electronic structure remains stable under carrier injection. A mesoscopic band model derived from synchrotron characterization data on ultrathin embedded Si nanowells (NWells), and from h-DFT confirms and further explains the NESSIAS impact to generate p/n homojunctions in i-nano-Si. Presenting a paradigm shift for Si-based VLSI, NESSIAS removes miniaturization limits, achieves faster charge carrier transport with massive reductions of energy demand and associated heat generation as required for ultralow power VLSI, and enables full cryo-functionality for quantum computing.

Authors 13

1. Dirk König corresponding Aachen Institute of Semiconductor Electronics

   Australian National University · RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University , , ,

   The Australian National University , , , ,

   Department of Material Physics, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia

   Institute of Semiconductor Electronics (IHT)

   Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074 Aachen, Germany

   RWTH Aachen University

2. M. Frentzen Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University , , ,

   Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074 Aachen, Germany

   RWTH Aachen University

3. Noël Wilck Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University , , ,

   Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074 Aachen, Germany

   RWTH Aachen University

4. Daniel Hiller

   TU Bergakademie Freiberg

   Affiliation as printed

   Technische Universität Bergakademie Freiberg , , ,

   Institute of Applied Physics (IAP)

   Technische Universität Bergakademie Freiberg

5. Giovanni Di Santo

   Elettra-Sincrotrone Trieste S.C.p.A.

   Affiliation as printed

   Elettra Sincrotrone Trieste , Strada Statale 14 km 163.5 , ,

   Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, Italy

6. L. Petaccia

   Elettra-Sincrotrone Trieste S.C.p.A.

   Affiliation as printed

   Elettra Sincrotrone Trieste , Strada Statale 14 km 163.5 , ,

   Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, Italy

7. Igor Píš

   AREA Science Park · Istituto Officina dei Materiali

   Affiliation as printed

   CNR-Istituto Officina dei Materiali (IOM) , Area Science Park S.S. 14 km 163.5 , ,

   CNR-Istituto Officina dei Materiali (IOM), Area Science Park S.S. 14 km 163.5, 34149 Trieste, Italy

8. Federica Bondino

   AREA Science Park · Istituto Officina dei Materiali

   Affiliation as printed

   CNR-Istituto Officina dei Materiali (IOM) , Area Science Park S.S. 14 km 163.5 , ,

   CNR-Istituto Officina dei Materiali (IOM), Area Science Park S.S. 14 km 163.5, 34149 Trieste, Italy

9. Elena Magnano

   AREA Science Park · Istituto Officina dei Materiali

   Affiliation as printed

   CNR-Istituto Officina dei Materiali (IOM) , Area Science Park S.S. 14 km 163.5 , ,

   CNR-Istituto Officina dei Materiali (IOM), Area Science Park S.S. 14 km 163.5, 34149 Trieste, Italy

10. Mykhaylo Motylenko

    TU Bergakademie Freiberg

    Affiliation as printed

    Technische Universität Bergakademie Freiberg , , ,

    Institute of Materials Science

    Technische Universität Bergakademie Freiberg

11. David Rafaja

    TU Bergakademie Freiberg

    Affiliation as printed

    Technische Universität Bergakademie Freiberg , , ,

    Institute of Materials Science

    Technische Universität Bergakademie Freiberg

12. Sean Campbell Smith

    Australian National University

    Affiliation as printed

    The Australian National University , , , ,

    Department of Material Physics, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia

    The Australian National University

13. Joachim Knoch Aachen Institute of Semiconductor Electronics

    RWTH Aachen University

    Affiliation as printed

    RWTH Aachen University , , ,

    Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074 Aachen, Germany

    RWTH Aachen University